DXT5401 discrete semiconductors r dc components co., ltd. technical specifications of pnp epitaxial planar transistor pinning 1 = base 2 = collector 3 = emitter description designed for general purpose applications requiring high breakdown voltages. sot-89 dimensions in inches and (millimeters) .063(1.60).055(1.40) .066(1.70).059(1.50) .167(4.25).159(4.05) .016(0.41).014(0.35) .120(3.04) .117(2.96) .181(4.60).173(4.40) .060(1.52).058(1.48) .020(0.51).014(0.36) .102(2.60).095(2.40) 1 2 3 characteristic symbol rating unit collector-base voltage vcbo -160 v collector-emitter voltage vceo -150 v emitter-base voltage vebo -5 v collector current ic -500 ma total power dissipation pd 1 w junction temperature tj +150 oc storage temperature tstg -55 to +150 oc absolute maximum ratings(ta=25oc) characteristic symbol min typ max unit test conditions collector-base breakdown volatge bvcbo -160 - - v ic=-100ma collector-emitter breakdown voltage bvceo -150 - - v ic=-1ma emitter-base breakdown volatge bvebo -5 - - v ie=-10ma collector cutoff current icbo - - -50 na vcb =-120v emitter cutoff current iebo - - -50 na veb =-5v collector-emitter saturation voltage (1) vce(sat)1 - - -0.2 v ic=-10ma, ib=-1ma vce(sat)2 - - -0.5 v ic=-50ma, ib=-5ma base-emitter saturation voltage (1) vbe(sat)1 - - -1 v ic=-10ma, ib=-1ma vbe(sat)2 - - -1 v ic=-50ma, ib=-5ma hfe1 50 - - - ic=-1ma, vce=-5v dc current gain(1) hfe2 60 - 240 - ic=-10ma, vce=-5v hfe3 50 - - - ic=-50ma, vce=-5v transition frequency ft 100 - - mhz vce =-10v, f=100mhz, ic=-10ma output capacitance cob - - 6 pf vcb =-10v, f=1mhz electrical characteristics(ratings at 25 oc ambient temperature unless otherwise specified) (1)pulse test: pulse width 380ms, duty cycle 2%
|
